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| ;实验9 根据材料编程 assume cs:code data segment db 'Welcome to masm!' db 00000010B,00100100B,01110001B data ends
stack segment db 16 dup(0) stack ends
code segment start: mov ax,data mov ds,ax mov ax,0B800H mov es,ax mov ax,stack mov ss,ax ; si指向属性字段 mov si,10H ; bx指向当前要写入的字符 mov bx,0 ; di指向显卡要写入的行 mov di,07c0h ; 160*12+160/5*2 ; bp指向列 mov bp,0 mov cx,3 fi: push cx mov cx,10H fii: mov dh,byte ptr ds:[si] mov dl,byte ptr ds:[bx] mov word ptr es:[di+bp],dx add bp,2 add bx,1 loop fii pop cx add si,1 sub bx,bx add di,0A0H sub bp,bp loop fi mov ax,4c00H int 21H code ends end start
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